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rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 4 1 204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 12 r f la1018s variable gain, low noise, high linearity amplifier 1920 mhz to 19 8 0mhz the rf la1018s is an analog controlled voltage variable gain amplifier featuring high linearity and very low noise figure. this lna with bypass mode and variable attenuator provides a minimum of 35db of dynamic range. the rfla1018s has a 3.3v control range with maximum gain at 0v. the lna is temperature compensated to reduce gain variation. noise figure of 0. 8db and iip3 of 2dbm make this component ideal for receiver input line - ups. the rfla1018s is packaged in a small 8.0mm x 8.0mm leadless mcm that is internally matched to 50 ? on all rf ports. functional block diagram ordering information rf la1018s sq sample b ag with 25 pieces rf la1018s sr 7" reel with 100 pieces rf la1018s tr 13 13 " reel with 250 0 pieces rf la1018s pck - 410 1920m hz to 1980m hz pcba with 5 - piece sample bag package: mcm , 16 - pin, 8.0mm x 8 .0mm features 1920mhz to 1980 mhz operation internally matched to 50 ? on all rf ports analog voltage variable attenuator with 3.3v control range bypass mode of lna for high dynamic range max gain = 35db minimum noise figure of 0.8db typical gain control range > 35db high iip3 = 2dbm single +5v supply applications cellular base stations, remote radio heads active antenna radios 3g, lte infrastructure low noise, variable gain with high linearity rfla1018s r f i n 2 3 4 1 8 6 5 7 1 1 1 2 1 3 1 4 1 5 1 6 g n d v c c 2 s c p v e n i d 1 v e n i d 2 s c n g n d r f o u t g n d g n d v c t r l 9 1 0 g n d v c c 1 v c c 3 g n d p a l n a l n a v o l t a g e v a r i a b l e a t t e n u a t o r
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 4 1 204 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 2 of 12 absolute maximum rat ings parameter rating unit control voltage +5.5 v supply voltage +5.5 v dc supply current 400 ma power dissipation 2000 mw max rf input power 27 dbm operating temperature - 40 to +85 c storage temperature range - 40 to +150 c maximum junction temperature +160 c esd rating - human body model (hbm) 1000 (class 1c) v moisture sensitivity level msl 3 caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max general performance electrical specifications, ta = - 40 c to 85 c , v c c = 4.75v to 5.25v , high gain mode, standard applications circuit operating frequency range 1920 1980 mhz max gain 35 38 db attenuation = minimum, v ctrl = 0v 36 37.5 db attenuation = minimum, v ctrl = 0v, temp = 25 c gain flatness 0.7 1 db gain range 13.7 35.9 db all conditions output ip3 37 dbm max gain, attenuation = minimum, v ctrl = 0v input ip3 0 2 dbm 30db to 35db gain 1.5 9 dbm 29db gain 3 9 dbm 1 9 db to 2 8 db gain output p1db (max gain) 25 dbm attenuation = minimum, v ctrl = 0v input p1db - 14 - 6 dbm 30db to 35db gain ; minimum input p1db specifications can be relaxed 1db between - 10 c to - 40 c - 10 - 3 dbm 29db gain ; minimum input p1db specifications can be relaxed 1db between - 10 c to - 40 c - 7 0 dbm 19 db to 28db gain ; minimum input p1db specifications can be relaxed 1db between - 10 c to - 40 c noise figure 0.8 1.25 db 35db gain input return loss - 23 - 20 db 25db to 35db gain ; maximum return loss specifications can be relaxed 2db between - 10 c to - 40 c - 24 - 18 db 19db to 2 4 db gain ; maximum return loss specifications can be relaxed 2db between - 10 c to - 40 c
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 12 rf la1018s parameter specification unit condition min typ max general performance - continued electrical specifications, ta = - 40 c to 85 c , v cc = 4.75v to 5.25v , high gain mode, standard applications circuit reverse isolation 60 76 db 35db gain output return loss - 22 - 15 db 19db to 35db gain; maximum return loss specifications can be relaxed 2db between - 10 c to - 40 c s11 phase variation 25 100 deg 1950mhz when input return loss is between 20db to 25db over temperature range from 25 to 85 c general performance electrical specifications, ta = - 40c to 85 c, v cc = 4.75v to 5.25v , low gain mode, standard applications circuit operating frequency 1920 1980 mhz max gain 20 22 db attenuation = minimum, v ctrl = 0v gain flatness 0.4 1 db gain range - 2.7 20 db all conditions output ip3 37 dbm max gain, attenuation = minimum, v c trl = 0v input ip3 14 20 dbm 12db to 18 db gain 18 22 dbm 3db to 11db gain output p1db (max gain) 25 dbm attenuation = minimum, v c trl = 0v input p1db 4 10 dbm 12db to 18 db gain ; minimum input p1db specifications can be relaxed 1db between - 10 c to - 40 c 7 12 dbm 3db to 11db gain ; minimum input p1db specifications can be relaxed 1db between - 10 c to - 40 c noise figure 3.8 11.3 db 18db gain input return loss - 22 - 18 db 3db to 18db gain ; maximum return loss specification can be relaxed 2db between - 10 c and - 40 c output return loss - 22 - 15 db s11 phase variation 25 100 deg 1950mhz when input return loss is between 20db to 25db over temperature range from 25 to 85 c power supply electrical specifications, ta = - 40c to 85 c, v cc = 4.75v to 5.25v , standard application circuit supply voltage 4.75 5 5.25 v v ctrl voltage 0 3.3 v logic high 2 5 v logic low 0 1 v thermal resistance 35.5 c/w 85 c at 5v; t ref = backside of module
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 12 rf la1018s parameter specification unit condition min typ max current electrical specifications, ta = - 40c to 85 c, v cc = 4.75v to 5.25v , low gain mode, standard application circuit supply current 250 290 320 ma hg mode current 1 250 290 320 ma current 2 160 200 225 ma lg mode notes: 1. lg mode with 2 nd lna bypass vcc still applied 2. lg mode with 2 nd lna bypass vcc disabled
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 12 rf la1018s typical performance: t = 25c, v dd = 5v unless otherwise noted
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 12 rf la1018s typical performance: t = 25c, v dd = 5v unless otherwise noted
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 12 rf la1018s typical performance: t = 25c, v dd = 5v unless otherwise noted
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 12 rf la1018s evaluation board schematic 1920 mhz to 1980 mhz application circuit
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 12 rf la1018s evaluation board bill of materials (bom) 192 0m hz to 198 0mhz application circuit description reference designator manufacturer manufacturer's p/n evaluation board ddi rfla1018410(e) cap, 0.1 f, 10%, 16v, x7r, 0402 c1, c3, c5 - c6, c8 - c9 murata electronics grm155r71c104ka88d do not place c2, c4, c7 conn, sma, end lnch, univ, hyb mnt, flt j1 - j2 heilind electronics per mat - 21 - 1038 res, 0 ? , 0402 r1 - r2 kamaya, inc. rmc1/16sjpth conn, hdr, st, plrzd, 9 - pin p1 itw pancon mpss100 - 9 - c rfla1018 s module u1 rfmd rfla1018 s evaluation board assembly drawing 192 0mhz to 1980mhz application circuit
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 12 rf la1018s pin names and descriptions pin name description 1 rfin rf input; internally 50 ? matched and dc blocked 2 gnd connect to low inductive path to ground 3 scn switch control line; s ee truth table 4 gnd connect to low inductive path to ground 5 vcc2 vcc supplied; 0.1 f decoupled internal, supply voltage to 2 nd stage lna; d isable vcc supply in bypass mode to save dc current 6 scp switch control line; s ee truth table 7 venid1 pin grounded in module 8 venid2 pin grounded in module 9 vtrl voltage variable attenuator control line; m ax gain 0v 10 gnd connect to low inductive path to ground 11 gnd connect to low inductive path to ground 12 rfout rf output; internally 50 ? match ; external dc block required 13 gnd connect to low inductive path to ground 14 vcc3 vcc supply; 0.1 f decoupling internal; supply voltage to stage 3 amplifier 15 vcc1 vcc supply; 0.1 f decoupling internal; supply voltage to 1 st stage amplifier 16 gnd connect to low inductive path to ground
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 12 rf la1018s package outline drawing (dimensions in millimeters)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds1 41 2 04 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 12 of 12 rf la1018s pcb stencil drawing (dimensions in millimeters) branding diagram

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